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| inchange semiconductor product specification silicon npn power transistors 2N5660 2n5661 description ? with to-66 package ? high breakdown voltage applications ? high speed switching and linear amplifier ? high-voltage operational amplifiers ? switching regulators ,converters ? deflection stages and high fidelity amplifers pinning (see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta=25 ?? ) symbol parameter conditions value unit 2N5660 250 v cbo collector-base voltage 2n5661 open emitter 400 v 2N5660 200 v ceo collector-emitter voltage 2n5661 open base 300 v v ebo emitter-base voltage open collector 6 v i c collector current 2.0 a i b base current 0.5 a t c =100 ?? 20 p t total power dissipation t a =25 ?? 2 w t j junction temperature 200 ?? t stg storage temperature -65~200 ?? thermal characteristics symbol parameter max unit r th j-c thermal resistance junction to case 5.0 ??/w fig.1 simplified outline (to-66) and symbol
inchange semiconductor product specification 2 silicon npn power transistors 2N5660 2n5661 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit 2N5660 200 v (br)ceo collector-emitter breakdown voltage 2n5661 i c =10ma ; i b =0 300 v v (br)ebo emitter-base breakdown voltage i e =10 | a ; i c =0 6 v v cesat-1 collector-emitter saturation voltage i c =1a; i b =0.1a 0.4 v v cesat-2 collector-emitter saturation voltage i c =2a; i b =0.4a 0.8 v v besat-1 base-emitter saturation voltage i c =1a ;i b =0.1a 1.2 v v besat-2 base-emitter saturation voltage i c =2a; i b =0.4a 1.5 v 2N5660 v ce =200v;v be(off) =1.5v i ces collector cut-off current 2n5661 v ce =300v;v be(off) =1.5v 0.2 ma 2N5660 v cb =250v; i e =0 i cbo collector cut-off current 2n5661 v cb =400v; i e =0 1.0 ma 2N5660 40 h fe-1 dc current gain 2n5661 i c =50ma ; v ce =2v 25 2N5660 40 120 h fe-2 dc current gain 2n5661 i c =0.5a ; v ce =5v 25 75 h fe-3 dc current gain i c =1a ; v ce =5v 15 h fe-4 dc current gain i c =2a ; v ce =5v 5 c ob output capacitance i e =0 ; v cb =10v;f=1mhz 45 pf 2N5660 v cc =100v;i c =0.5a;i b1 =-i b2 =15ma t on turn-on time 2n5661 v cc =100v;i c =0.5a;i b1 =-i b2 =25ma 0.25 | s 2N5660 v cc =100v;i c =0.5a;i b1 =-i b2 =15ma 0.85 t off turn-off time 2n5661 v cc =100v;i c =0.5a;i b1 =-i b2 =25ma 1.2 | s inchange semiconductor product specification 3 silicon npn power transistors 2N5660 2n5661 package outline fig.2 outline dimensions |
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